【英文标准名称】:StandardGuidefortheMeasurementofSingleEventPhenomena(SEP)InducedbyHeavyIonIrradiationofSemiconductorDevices
【原文标准名称】:半导体器件重离子照射感应产生的单件信号现象的测量标准指南
【标准号】:ASTMF1192-2000(2006)
【标准状态】:现行
【国别】:
【发布日期】:2000
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(Guide)
【标准水平】:()
【中文主题词】:
【英文主题词】:SEB;SEE;SEFI;SEGR;SEL;SEP;SEPcrosssection;SEU;singleevent;singleeventeffect;singleeventphenomena;singleeventupset;spaceenvironment
【摘要】:Manymodernintegratedcircuits,powertransistors,andotherdevicesexperienceSEPwhenexposedtocosmicraysininterplanetaryspace,insatelliteorbitsorduringashortpassagethroughtrappedradiationbelts.ItisessentialtobeabletopredicttheSEPrateforaspecificenvironmentinordertoestablishpropertechniquestocountertheeffectsofsuchupsetsinproposedsystems.AsthetechnologymovestowardhigherdensityICs,theproblemislikelytobecomeevenmoreacute.ThisguideisintendedtoassistexperimentersinperforminggroundteststoyielddataenablingSEPpredictionstobemade.1.1Thisguidedefinestherequirementsandproceduresfortestingintegratedcircuitsandotherdevicesfortheeffectsofsingleeventphenomena(SEP)inducedbyirradiationwithheavyionshavinganatomicnumberZ2.Thisdescriptionspecificallyexcludestheeffectsofneutrons,protons,andotherlighterparticlesthatmayinduceSEPviaanothermechanism.SEPincludesanymanifestationofupsetinducedbyasingleionstrike,includingsofterrors(oneormoresimultaneousreversiblebitflips),harderrors(irreversiblebitflips),latchup(permanenthighconductingstate),transientsinducedincombinatorialdeviceswhichmayintroduceasofterrorinnearbycircuits,powerfieldeffecttransistor(FET)burn-outandgaterupture.Thistestmaybeconsideredtobedestructivebecauseitofteninvolvestheremovalofdevicelidspriortoirradiation.Bitflipsareusuallyassociatedwithdigitaldevicesandlatchupisusuallyconfinedtobulkcomplementarymetaloxidesemiconductor,(CMOS)devices,butheavyioninducedSEPisalsoobservedincombinatoriallogicprogrammablereadonlymemory,(PROMs),andcertainlineardevicesthatmayrespondtoaheavyioninducedchargetransient.PowertransitorsmaybetestedbytheprocedurecalledoutinMethod1080ofMILSTD750.1.2TheproceduresdescribedherecanbeusedtosimulateandpredictSEParisingfromthenaturalspaceenvironment,includinggalacticcosmicrays,planetarytrappedionsandsolarflares.Thetechniquesdonot,however,simulateheavyionbeameffectsproposedformilitaryprograms.TheendproductofthetestisaplotoftheSEPcrosssection(thenumberofupsetsperunitfluence)asafunctionofionLET(linearenergytransfer,orionizationdepositedalongtheion''spaththroughthesemiconductor).Thisdatacanbecombinedwiththesystem''sheavyionenvironmenttoestimateasystemupsetrate.1.3AlthoughprotonscancauseSEP,theyarenotincludedinthisguide.AseparateguideaddressingprotoninducedSEPisbeingconsidered.1.4ThevaluesstatedinInternationalSystemofUnits(SI)aretoberegardedasstandard.Nootherunitsofmeasurementareincludedinthisguide.Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:L40
【国际标准分类号】:31_080_01
【页数】:11P.;A4
【正文语种】:


Product Code:SAE AMS5630
Title:Steel, Corrosion-Resistant, Bars, Wire, and Forgings, 17Cr - 0.52Mo (0.95 - 1.20C) (SAE 51440C)
Issuing Committee:Ams F Corrosion Heat Resistant Alloys Committee
Scope: This specification covers a corrosion-resistant steel in the form of bars, wire, forgings, and forging stock.
Rationale: This specification covers a corrosion-resistant steel in the form of bars, wire, forgings, and forging stock.